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| Product Description Stanford Microdevices' SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Isolation vs. Frequency VControl = -5 V -20 -30 -40 dB -50 -60 -70 D C 1 2 3 4 Product Features * High Isolation: 32dB at 2GHz * Low DC Power Consumption * Non-reflective * Broadband Performance - True DC Operation * Low Cost Small Outline Plastic Package Applications * Analog/Digital Wireless System * Spread Spectrum * GPS Switches GHz Electrical Specifications at Ta = 25C Sym bol In s P a r a m e te r s : T e s t C o n d itio n s In s e r tio n L o s s U n its M in . Ty p . 0 .8 0 .9 1 .4 30 22 40 35 25 1 .1 5 1 .2 5 1 .5 0 1 .1 5 1 .2 5 1 .5 0 dBm dBm dBm dBm uA nsec +26 +29 +45 +48 40 3 M ax. 1 .3 1 .4 f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z V = -5 V V = -8 V V = -5 V V = -8 V dB dB dB dB dB dB Is o l Is o la tio n VSW R on In p u t & O u tp u t V S W R ( o n o r lo w lo s s s ta te ) V S W R o ff In p u t & O u tp u t V S W R ( o ff o r is o la t e d s t a t e ) P1dB O u tp u t P o w e r a t 1 d B C o m p r e s s io n f= 0 .5 -4 .0 G H z T h ir d O r d e r In te r c e p t P o in t f= 0 .5 -4 .0 G H z D e v ic e C u r r e n t S w itc h in g S p e e d 5 0 % c o n tro l to 1 0 % /9 0 % R F T O IP Id Is w The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-5 SSW-108 DC-4 GHz Absorptive SPDT GaAs Switch Absolute Maximum Ratings RF Input P ower C on tr o l Vol t ag e Operating Te m p e r a t u r e Storage Te m p e r a t u r e Thermal Res istance 2W Max> 500MHz -10V -45C to +85C Truth Table V1 V2 J1-J2 J1-J3 0 -5 -5 0 Low Loss Isolation Isolation Low Loss -65C to +150C 20 deg C/W Pin Out Pi n F un ct i on Switch Schematic 1 2 3 4 5 6 7 8 GN D J1 GN D GN D J2 V1 V2 J3 Switches Insertion Loss vs. Frequency VControl = -5 V 0.0 -0.5 On Port Input/Output VSWR vs. Frequency VControl = -5 V 2.0 1.8 1.6 dB -1.0 1.4 -1.5 -2.0 DC 1 2 3 4 1.2 1.0 DC 1 2 3 4 GHz GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-6 |
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